NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the development of its 3D X-AI chip technology, targeted to replace the current DRAM chips inside high bandwidth memory (HBM) to solve data bus bottlenecks by enabling AI processing in 3D DRAM. 3D X-AI can reduce the huge amount of data transferred between HBM and GPUs during AI workloads. NEO’s innovation is set to revolutionize the performance, power consumption, and cost of AI Chips for AI applications like generative AI.
AI Chips with NEO’s 3D X-AI technology can achieve:
- 100X Performance Acceleration: contains 8,000 neuron circuits to perform AI processing in 3D memory.
- 99% Power Reduction: minimizes the requirement of transferring data to the GPU for calculation, reducing power consumption and heat generation by the data bus.
- 8X Memory Density: contains 300 memory layers, allowing HBM to store larger AI models.