Applied Materials, Inc. today introduced materials engineering innovations designed to increase the performance-per-watt of computer systems by enabling copper wiring to scale to the 2 nm logic node and beyond. “The AI era needs more energy-efficient computing, and chip wiring and stacking are critical to performance and power consumption,” said Dr. Prabu Raja, President of the Semiconductor Products Group at Applied Materials. “Applied’s newest integrated materials solution enables the industry to scale low-resistance copper wiring to the emerging angstrom nodes, while our latest low-k dielectric material simultaneously reduces capacitance and strengthens chips to take 3D stacking to new heights.”
Overcoming the Physics Challenges of Classic Moore’s Law Scaling
Today’s most advanced logic chips can contain tens of billions of transistors connected by more than 60 miles of microscopic copper wiring. Each layer of a chip’s wiring begins with a thin film of dielectric material, which is etched to create channels that are filled with copper. Low-k dielectrics and copper have been the industry’s workhorse wiring combination for decades, allowing chipmakers to deliver improvements in scaling, performance and power-efficiency with each generation.