Lam Research Corp. today extended its leadership in 3D NAND flash memory etching with the introduction of Lam Cryo 3.0, the third generation of the company’s production-proven cryogenic dielectric etch technology. As the proliferation of generative artificial intelligence (AI) continues to propel the demand for memory with higher capacity and performance, Lam Cryo 3.0 provides etch capabilities critical for the manufacturing of future leading-edge 3D NAND. Leveraging ultra cold temperatures, high power confined plasma reactor technology, and innovations in surface chemistry, Lam Cryo 3.0 etches with industry-leading precision and profile control.
“Lam Cryo 3.0 paves the way for customers on the path to 1,000-layer 3D NAND,” said Sesha Varadarajan, senior vice president of Global Products Group at Lam Research. “With five million wafers already manufactured using Lam cryogenic etch, our newest technology is a breakthrough in 3D NAND production. It creates high aspect ratio (HAR) features with angstrom-level precision, while delivering lower environmental impact and more than double the etch rate of conventional dielectric processes. Lam Cryo 3.0 is the etch technology our customers need to overcome the AI era’s key NAND manufacturing hurdles.”